Power FETs Employ Next-Gen Process Technology

Dec. 1, 2003
The Q2-Class HiPerFET power MOSFETs tap the company's second-generation HiPerFET process technology that reportedly reduces both gate charge and gate resistance. Compared to prior generation devices, gate charge has been reduced by 25% and gate

The Q2-Class HiPerFET power MOSFETs tap the company's second-generation HiPerFET process technology that reportedly reduces both gate charge and gate resistance. Compared to prior generation devices, gate charge has been reduced by 25% and gate resistance has been cut by a factor of 100. Via reductions in wafer thickness, thermal impedance has been reduced by 30%. Devices are available rated for voltages from 500V to 1.2 kV and current ratings from 14A to 80A in packages that include TO-247, PLUS247, ISOPLUS247, TO-264, PLUS 246, and SOT-227. The latest devices include the IXFH36N55Q2 rated at 550V and 36A with an on-resistance of 160 milohms and a QG of 105 nC. The IXFH14N1000Q2 rated at 1 kV and 14A with an on-resistance of 900 milohms and a QG of 82 nC is also available. IXYS CORP., Santa Clara, CA. (408) 982-0700.

Company: IXYS CORP.

Product URL: Click here for more information

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!