SOT23 FETs Raise Power Dissipation Capability

Lowering on-resistance by half, the company's 20V and 30V trench MOSFETs double the drain current rating of its previous SOT23 devices, increasing their power dissipation capability from 625 mW to 1W. The ZXMN2A14F and XMN3A14F n-channel devices exhibit a 37% lower junction-to-ambient thermal resistance from 200°C to 125°C. Rated for a continuous drain current of 4.1A, the 20V ZXMN2A14F has an on-resistance of 60 milliohms at a VGS of 4.5V. The 30V ZXMN3A14F provides a continuous drain current of 3.9A and an on-resistance of 65 milliohms at a VGS of 10V. The devices cost $0.45 each/10K, with delivery time from four to six weeks. ZETEX, Hauppauge, NY. (631) 360-2222.