MOSFETs Sport Ultra-Compact Footprint

April 6, 2004
Designers employing P-channel MOSFETs in space-constrained applications have candidates for the job in the form of a new series of µTrenchMOS FETS housed in 2.9 x 1.5-mm TSOP6 packages. The first offering in the series is the 20V PMN50XP

Designers employing P-channel MOSFETs in space-constrained applications have candidates for the job in the form of a new series of µTrenchMOS FETS housed in 2.9 x 1.5-mm TSOP6 packages. The first offering in the series is the 20V PMN50XP P-channel MOSFET with an on-resistance of 50 mW. Additional products will become available over the coming months with a typical on-resistance of 50 mW at 4.5V and rated for a 2.5V gate drive. The new MOSFETs includes devices with both 20V and 30V VDS ratings and drive characteristics that will allow them to be fully turned on with gate-drive voltages as low as 2.5V. Samples of the new P-channel FETs are available now, with volume pricing set at $0.12 in each/10K. ROYAL PHILIPS ELECTRONICS, San Jose, CA. (800) 234-7381.

Company: ROYAL PHILIPS ELECTRONICS

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