High-Voltage Power MOSFETs Cut System Power Losses

July 6, 2004
Using a multi epitaxy layer to improve on-resistance (RDS(ON)), a pair of high voltage power MOSFETs, the FCP11N60 and FCPF11N60, are designed to reduce power losses and increase efficiency in switch-mode power supply and power-factor correction

Using a multi epitaxy layer to improve on-resistance (RDS(ON)), a pair of high voltage power MOSFETs, the FCP11N60 and FCPF11N60, are designed to reduce power losses and increase efficiency in switch-mode power supply and power-factor correction applications. Both devices have an RDS(ON) rating of 0.32Ω (typical) and a low Figure of Merit (on-resistance x gate charge), which makes for reduced gate driver power requirements and smaller switching power losses. Minimum breakdown voltage (BVDSS ) for both types is 600V, and drain current is a maximum of 11A. The devices can withstand a current change rate (di/dt) of 1430 A/µs. The FCP11N60 is packaged in a TO-220 while the FCPF11N60 is mounted in a TO-220F package. Maximum power dissipation for the FCP11N60 is 125W and for the FCPF11N60 is 36W. Pricing for the FCP11N60 is $3.04 each/1,000 and for the FCPF11N60 is $3.19 each/1,000. FAIRCHILD SEMICONDUCTOR, San Jose, CA. (408) 822-227.

Company: FAIRCHILD SEMICONDUCTOR

Product URL: Click here for more information

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!