Mounted in a PowerPAK 1212-8 package that measures 3 mm x 3 mm by 1.07 mm high, the Si7820DN power MOSFET has smaller dimensions than industry-standard TSSOP-8 types, but offers superior thermal performance. Breakdown voltage is rated at 200V. Power dissipation is 3.8W and thermal resistance is specified at 1.9°C/W, compared to 16°C/W for SO-8 types. Operating junction temperature range and storage temperature are both specified over a -55°C to +150°C range. On-resistance is 240 m? and typical gate charge (Qgd) is 12.1 nC at a VGS of 10V. The device is intended for sub-brick dc/dc converter power architectures in fixed telecom networks and routers. Price is $1.26 each/10,000. VISHAY INTERTECHNOLOGY, Santa Clara, CA. (619) 336-0860.
Company: VISHAY INTERTECHNOLOGY
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