High-Performance SiGe HBT Seeks VCO Apps

Oct. 8, 2008
Targeted at wireless handsets and infrastructure products, NEC's latest SiGe HBT is designed for VCO and LNA applications from 800 MHz to 6.0 GHz. The NESG2107 features improved frequency stability with low phase noise and low pushing/pulling

Targeted at wireless handsets and infrastructure products, NEC's latest SiGe HBT is designed for VCO and LNA applications from 800 MHz to 6.0 GHz. The NESG2107 features improved frequency stability with low phase noise and low pushing/pulling performance. Its 1/f noise corner frequency is 5 kHz compared to 20 kHz for standard silicon bipolar devices. Other features include a noise figure of 0.9 dB typ at 2.0 GHz, high gain at low operating bias, and low dc power consumption. The device is available in two lead-free packages: NEC's 19 package and an ultra miniature M33 package. The flat-lead M33 measures 0.64 x 0.84 mm and is just 0.4 mm high. The NESG2107 is fabricated using NEC's silicon germanium UHS2-HV (High Voltage) wafer process. According to the company, this process produces devices that combine the low noise/high gain performance of GaAs with the cost advantages of silicon. CALIFORNIA EASTERN LABS, Santa Clara, CA. (408) 988-3500.

Company: CALIFORNIA EASTERN LABS

Product URL: Click here for more information

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