A series of RF power amplifiers, the RF3800/3802/3805, operate over frequencies from 450 MHz to 2.17 GHz for driver applications in cellular base stations. The devices are fabricated in gallium arsenide heterojunction bipolar transistor (GaAs HBT) technology. The RF3800 covers the frequency range from 450 to 470 MHz; two versions of the RF3802 span 869 to 894 MHz and 921 to 960 MHz; and the RF3805 is available in three frequency ranges: 1.8 to 1.88 GHz, 1.93 to 1.99 GHz and 2.11 to 2.17 GHz. Power gains range from 14 dB for the RF3800 to 20 dB for the RF3805. Power at the 1-dB compression point (P1dB) is 36 dBm for all versions. Efficiencies at P1dB range from 45 for the RF3800 to 31 for the RF3805 (2.11 to 2.17 GHz version). All types run from an 8V supply voltage and draw between 400 and 500 mA. The amplifiers are packaged in a thermally-enhanced aluminum nitride LCC-8 package, said to be a lower cost alternative to ceramic metal-flanged packages. RF MICRO DEVICES INC., Greensboro, NC. (336) 664-1233.
Company: RF MICRO DEVICES INC.
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