MOSFETs Up Threshold, Lower On Resistance

May 2, 2005
Emerging as the industry’s first n-channel MOSFETs that combine a high 3.4-V threshold voltage with on-resistances as low as 2.7 mΩ, the company’s latest devices target high-temperature, high-current applications with inductive loads.

Emerging as the industry’s first n-channel MOSFETs that combine a high 3.4-V threshold voltage with on-resistances as low as 2.7 mΩ, the company’s latest devices target high-temperature, high-current applications with inductive loads. The offering includes 10 models, six 40V and four 60V devices, with on resistances ranging from 2.7 mΩ to 23 mΩ with maximum junction temperatures of 150°C or 175°C, depending on the model. Available in DPAK, D2PAK, and PowerPAK SO-8 packages, samples and production quantities are available now with lead times of 10 to 12 weeks for larger orders. Pricing starts at $1.35 each/100,000. For further information, call VISHAY SILICONIX, Santa Clara, CA. (619) 336-0860.

Company: VISHAY SILICONIX

Product URL: Click here for more information

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