Power MOSFET Lowers Boom On Resistance

July 1, 2006
Enlisting the latest optimization of the company’s proprietary STripFET technology, the STD95N04 40V power MOSFET achieves a maximum on-resistance of 6.5 mΩ, and 5 mΩ typical. The latest incarnation of the technology is based on

Enlisting the latest optimization of the company’s proprietary STripFET technology, the STD95N04 40V power MOSFET achieves a maximum on-resistance of 6.5 mΩ, and 5 mΩ typical. The latest incarnation of the technology is based on significantly increased cell density, leading to lower on-resistance and losses while using less silicon area. The 80A device readies for use in dc/dc converters, motor control, solenoid drivers and ABS systems. Compliant with the AEC Q101 stress-test qualification for discrete semiconductors, maximum operating temperature is 175°C, and the device is 100% avalanche rated. Available in DPAK and TO-220 packages, pricing is $0.38 each/10,000. STMICROELECTRONICS INC., Lexington, MA. (888) 787-3550.

Company: STMICROELECTRONICS INC.

Product URL: Click here for more information

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