Power MOSFET Boasts Very Low Conduction Losses

The second generation of the MDmesh (Multiple Drain mesh) technology has debuted with the STD11NM60N power MOSFET, which features an R_DS(ON) of 450 mΩ, up to 55% lower than previous MDmesh devices, without sacrificing control of temperature dependence. The device also has an energy-optimized driver circuit that enables the MOSFET to drive higher currents at a lower gate threshold voltage, V_GS(th). By keeping the same threshold spread (2V), the range of V_GS used to drive the device has been lowered, which not only optimizes the drive but also ensures a high noise immunity. This prevents the circuit from switching on unintentionally. The device’s excellent diode dv/dt capability and good avalanche performance allow users to keep operating temperatures within the typical working range. As a result of the very low conduction losses and reduced power dissipation, the device also helps users cut heatsink dimensions and save board space. The chips come in DPAK/IPAK or TO-220FP packages. The STD11NM60N is available now, priced at $0.90 each/10,000. STMICROELECTRONICS, Lexington, MA. (781) 861-2650.