Phototransistors Race To Respond

In surface-mount packages measuring 2.5 mm x 2 mm, the OP570 series NPN phototransistors feature an infrared-transmissive lens that enables the devices to operate with faster response times while keeping costs down. Electrical performance is characterized at collector-emitter breakdown voltages of 30V, an emitter-collector breakdown voltage of 5V, collector current of 20 mA, and a power dissipation of 130 mW. Minimum on-state collector current is 2.5 mA and maximum collector-emitter dark current is 100 nA. The devices are RoHS-compliant, compatible with high temperature soldering processes, and operate in temperatures from -25°C to +85°C. They are available with four different lead configurations, and are mechanically and spectrally matched to the OP270 Series 890-nm, GaAIAs infrared LEDs. Typical pricing starts at $0.23 each/2,500. OPTEK TECHNOLOGY INC., Carrollton, TX. (972) 323-2200.