Power MOSFETs Specify On-Resistance At 1.2V Gate-To-Source Voltage

To ease sub-1.8V power-management designs in portables, the company's latest power MOSFETs debut as the market's first such devices with on-resistance ratings at a 1.2V gate-to-source voltage. The TrenchFET devices align the MOSFET turn-on voltage with the 1.2V to 1.3V operating voltages of digital ICs found in mobile electronics. They can be driven directly from a 1.2V bus, eliminating the need for an extra conversion stage in systems with a core voltage lower than 1.8 V. Notable, the MOSFETs guarantee n-channel on-resistances as low as 41 mW and p-channel on-resistances as low as 95 mW at a 1.2V gate drive. Devices (and package types) in the offering include the n-channel SiA414DJ (PowerPAK SC-70), Si8424DB (MICRO FOOT), and SiB414DK (PowerPAK SC-75), and the p-channel SiA417DJ (PowerPAK SC-70), Si8429DB (MICRO FOOT), and SiB417DK (PowerPAK SC-75). Samples and production quantities of the 1.2V devices are available now with prices starting at $0.15 each/100,000. VISHAY INTERTECHNOLOGY INC., Santa Clara, CA. (619) 336-0860.