Electronic Design
  • Resources
  • Directory
  • Webinars
  • CAD Models
  • Video
  • Blogs
  • More Publications
  • Advertise
    • Search
  • Top Stories
  • Tech Topics
  • Analog
  • Power
  • Embedded
  • Test
  • AI / ML
  • Automotive
  • Data Sheets
  • Topics
    - TechXchange Topics --- Markets --AutomotiveAutomation-- Technologies --AnalogPowerTest & MeasurementEmbedded
    Resources
    Electronic Design ResourcesTop Stories of the WeekNew ProductsKit Close-UpElectronic Design LibrarySearch Data SheetsCompany DirectoryBlogsContribute
    Members
    ContentBenefitsSubscribeDigital editions
    Advertise
    https://www.facebook.com/ElectronicDesign
    https://www.linkedin.com/groups/4210549/
    https://twitter.com/ElectronicDesgn
    https://www.youtube.com/channel/UCXKEiQ9dob20rIqTA7ONfJg
    Electronicdesign Com Products Analog And Mixed Signal Gan Hemt Transistors Invade Wimax Domains36554
    1. Technologies
    2. Analog

    GaN HEMT Transistors Invade WiMAX Domains

    Oct. 8, 2008
    Claiming a breakthrough for WiMAX applications, the 15W CGH55015F and 30W CGH55030F debut as the first GaN HEMT transistors specified to operate at frequencies up to 5.8 GHz. Reported benefits of the devices include a four-fold increase in efficiency
    Staff

    Electronicdesign Com Products Analog And Mixed Signal Gan Hemt Transistors Invade Wimax Domains36554
    1 of Enlarge image
    Electronicdesign Com Images Spacer

    Claiming a breakthrough for WiMAX applications, the 15W CGH55015F and 30W CGH55030F debut as the first GaN HEMT transistors specified to operate at frequencies up to 5.8 GHz. Reported benefits of the devices include a four-fold increase in efficiency when compared with similar power level GaAs MESFET devices, elevated frequency operation when compared with commercially available silicon LDMOS devices, and operational capabilities in the license-exempt, 5.8-GHz ISM band as well as 5.3-GHz and 5.47-GHz U-NII bands. Other features include a linearity of better than 2.5% EVM at average power under a WiMAX signal at 25% drain efficiency covering an instantaneous bandwidth of 5.5 GHz to 5.8 GHz. Both transistors are available with reference design amplifier platforms. For further details, call CREE INC., Durham, NC. (919) 313-5300.

    Company: CREE INC.

    Product URL: Click here for more information

    Continue Reading

    Patent Lawsuit Draws Attention to Power Electronics Industry

    GaN Heads to Higher Power Levels for Renewable Energy, EVs

    Sponsored Recommendations

    Take Charge with Littelfuse Charging Solutions for Peak Performance in Material Handling EVs

    Nov. 28, 2023

    Nexperia Webinar: Application Specific MOSFETs and GaN Solutions for the Automotive Market

    Nov. 28, 2023

    TTI Transportation Resource Center

    Nov. 28, 2023

    Molex: What Happens When the Driver’s Seat is Empty?

    Nov. 28, 2023

    Comments

    To join the conversation, and become an exclusive member of Electronic Design, create an account today!

    I already have an account

    New

    Solve Augmented-Reality Display Challenges with Laser Beam Scanning

    Automotive-Rated Dual Op Amp Blends Medium Voltage and Accuracy

    How to Build Wide-Dynamic-Range Systems (Part 1)

    Most Read

    Observability Framework Exposes DDS

    Quick Poll: Is right to repair a consideration when designing your product?

    MEMS Mirrors: The Next Big Wave in MEMS Technology


    Sponsored

    BNC Miniature RF Connectors and Cable Assemblies

    Achieving GaN Products With Lifetime Reliability

    GaN FET considerations

    Electronic Design
    https://www.facebook.com/ElectronicDesign
    https://www.linkedin.com/groups/4210549/
    https://twitter.com/ElectronicDesgn
    https://www.youtube.com/channel/UCXKEiQ9dob20rIqTA7ONfJg
    • About Us
    • Contact Us
    • Advertise
    • Do Not Sell or Share
    • Privacy & Cookie Policy
    • Terms of Service
    © 2023 Endeavor Business Media, LLC. All rights reserved.
    Endeavor Business Media Logo