GaN HEMT Transistor Sets Record For Wideband Amp Efficiency

Poised for general-purpose military and industrial applications, the CGH40090PP GaN HEMT microwave transistor boasts of superior performance over wide bandwidths when compared to GaAs MESFET or Si LDMOSFET technologies. The device consists of a pair of GaN HEMT transistors in an industry-standard Gemini ceramic-metal package. Operating in a balanced 500 MHz to 2.5 GHz instantaneous bandwidth reference amplifier that offers a typical small-signal gain of 14 dB, it delivers a typical CW output power of 90W and typical drain efficiencies of 55% over the entire band. Reportedly, this amplifier provides the best-known efficiency in the industry for any 5:1 bandwidth amplifier over this frequency range and power level. CREE INC., Durham, NC. (919) 313-5300.