MOSFET/ Schottkys Achieve 3-mOhm On-Resistance In SO-8 Package

In unleashing the first of its monolithic MOSFET and Schottky SkyFET products to use the company's latest TrenchFET Gen III silicon, the new Si4628DY MOSFET delivers the lowest on-resistance ever for a device of its type in the SO-8 package, with a maximum RDS(on) of 3 m? at a 10-V gate drive and 3.8 m? at 4.5 V. The Si4628DY SkyFET will typically be used as the low-side power MOSFET in synchronous buck converters for notebook core voltage and VRM applications, graphic cards, point-of-load power conversion, and synchronous rectification in computers and servers. Its on-resistance times gate charge figure of merit (FOM), a key indicator of performance in such applications, is 26% better at a 10-V gate drive and 34% better at 4.5 V than the next best device in the SO-8. Integration of the Schottky into the MOSFET silicon chip eliminates the parasitic inductances that would be present if these were mounted to the PCB as individual components or if separate MOSFET and Schottky diode components were co-packaged. Samples and production quantities of the Si4628DY are available now, with lead times of 10 to 12 weeks for larger orders. Pricing starts at $0.48 each in lots of 100,000. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (605) 665-9301.