London, United Kingdom: Targeting high-frequency radio applications, NXP Semiconductors says that by the end of 2010 it will be able to offer a total of more than 50 products based on silicon germanium (SiGe). The company’s QUBiC4 SiGe:C process is targeted at high-frequency applications in the wireless, broadband communications, networking, and multimedia markets.
With QUBiC4, wireless-system manufacturers can add more functionality onto devices. The process also speeds migration from GaAs technology to silicon by enabling low-noise performance and IP availability, says the company.
There are three variants of the technology. QUBiC4+ is a silicon-based process for applications up to 5GHz such as medium power amplifiers. QUBiC4X is a 0.25μm SiGe:C process typically used for applications up to 30 GHz and very-low-noise applications like GPS. The recent entry, the 0.25μm QUBiC4Xi SiGe:C process, offers an Ft in excess of 200GHz. It’s particularly suited for applications above 30GHz and those requiring minimum noise figure, such as VSAT and radar.
Applications for QUBiC4-based products ranges from mobile platforms, personal navigation devices, AESA radars, satellite DBS/-VSAT, e-metering, software-defined radios (SDRs), base stations, point-to-point radio links, and WLAN, where high frequency and high integration levels are essential.
“NXP is committed to the development of products produced with SiGe:C technology to address the fast-moving dynamics of the RF/microwave markets. We endeavour to provide cost-effective, integrated, high frequency solutions with the performance of gallium-arsenide (GaAs) technologies using a silicon-based process,” says Ronald van Cleef, general manager, RF small signal business, NXP Semiconductors.
Currently, a dozen products are available, including GPS low-noise amplifiers (e.g., BGU7005), medium-power amplifiers (e.g., BGA7124), and LO generators such (e.g., TFF1003HN). Another 40 new products will be released throughout the year.