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20V P-Channel MOSFET Slices On Resistance

Oct. 8, 2008
Unveiled as the first device built on the company’s latest p-channel TrenchFET Gen III technology, the Si7137DP 20V device claims to achieve the lowest on-resistance for a p-channel MOSFET with the footprint area of an SO-8. In a PowerPAK SO-8...

Unveiled as the first device built on the company’s latest p-channel TrenchFET Gen III technology, the Si7137DP 20V device claims to achieve the lowest on-resistance for a p-channel MOSFET with the footprint area of an SO-8. In a PowerPAK SO-8 package, the device offers an on-resistance of 1.9 milliOhms at 10 V, 2.5 milliOhms at 4.5 V, and 3.9 milliOhms at 2.5 V. Pricing for the Si7137DP TrenchFET power MOSFET is $0.70 each/100,000. For further information, call VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.

Company: VISHAY INTERTECHNOLOGY, INC.

Product URL: Click here for more information

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