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Power MOSFET Exhibits 18-mΩ On Resistance

Dec. 2, 2009
SiA433EDJ 20V power MOSFET

Reportedly, the SiA433EDJ 20V power MOSFET achieves the industry’s lowest on-resistance for a p-channel device in a 2 mm x 2 mm PowerPAK SC-70 package. On resistance is 18 mΩ at 4.5V, 26 mΩ at 2.5V, and 65 mΩ at 1.8 V. The MOSFET is also allegedly the only 20V device with both a gate-source voltage of 12 V and an on-resistance rating at 1.8V. To reduce field failures, the device integrates a Zener diode for ESD protection up to 1,800V. Available in production quantities by the first quarter of 2010, pricing starts at $0.16 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.

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