MOSFETs Efficiently Handle Reduced Supply Voltages

Employing a proprietary process that allegedly yields dramatic improvements in on-resistance at very low gate-drive voltages, the ECOMOS series N- and P-channel MOSFETs address the prescribed operation at lower gate drive voltages that emerging generations of portable electronics require. Reportedly, on-resistance values are as much as 90% lower than comparable devices when operating at 1.5V or 1.2V. ECOMOS 1.5V devices come in three package sizes, depending on maximum power dissipation, in configurations that include single P- or N-channel devices with or without a Schottky barrier diode, and complex, multi-die dual P- or N-channel devices. Package sizes include WEMT6 (1.8 mm x1.6 mm x 0.8 mm), TSST8 (3 mm x 1.9 mm x 0.8 mm), and TSMT8 (3 mm x 2.8 mm x 0.8 mm). Prices range from $0.16 to $0.46. ROHM Semiconductor, San Diego, CA. (408) 436-1674.