Power MOSFETs Trim On-Resistance, Offer Package Options

Feb. 5, 2010

The 600V SiHP22N60S, SiHF22N60S, SiHG22N60S, and SiHB22N60S Super Junction FET power MOSFETs specify a maximum on resistance of 0.19O a 10V gate drive and come in TO-220, TO-220 FULLPAK, TO-247, and TO-263 packages, respectively

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The 600V SiHP22N60S, SiHF22N60S, SiHG22N60S, and SiHB22N60S Super Junction FET power MOSFETs specify a maximum on resistance of 0.19Ω a 10V gate drive and come in TO-220, TO-220 FULLPAK, TO-247, and TO-263 packages, respectively. The devices feature a gate charge of 98 nC and high repetitive avalanche energy capabilities. Peak current handling is 65A pulsed and 22A continuous and all four devices feature an effective output capacitance specification. Pricing starts at $3 for devices in the TO-220 and TO-220F package and $3.50 for TO-247 and TO-263 packages. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.