The SiHF8N50L-E3, a 500V, n-channel power MOSFET, offers a trr of 63 ns and Qrr of 114 nC, with a gate charge of 34 nC. On resistance is 1? at 10V gate drive, which translates into lower conduction losses that save energy in LLC, full-bridge, half-bridge, and double-forward topologies. The device is 100% avalanche tested and specifies a peak current handling of 22A pulsed and 8A continuous, limited by maximum junction temperature. Available in a TO-220 FULLPAK, pricing is $0.475 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.