Groomed for S-Band radar applications, the ILD2731M140 and ILD3135M180 LDMOS transistors operate in the 2.7 GHz to 3.1 GHz and 3.1 GHz to 3.5 GHz frequency bands, respectively. The ILD2731M140, operating under 300-µs pulse width 10% duty cycle pulsing conditions, typically pumps out a minimum of 140W of peak output power with 12 dB of gain. Specified operation is with Class AB bias. The LDMOS transistor geometry employs a gold metallization system to achieve maximum reliability. The single ended device is housed in a ceramic flanged package. Under similar operating conditions and Class AB bias, the ILD3135M180 delivers a minimum of 180W of peak output power with 11 dB of gain. Integra Technologies Inc., El Segundo, CA. (310) 606-0855.