MOSFETS Lower On Resistance, Improve Gate Charge

July 29, 2010

The SiHP12N50C-E3, SiHF12N50C-E3, and SiHB12N50C-E3 500V, 12A n-channel power MOSFETs feature a 0.555? on-resistance at a 10V gate drive and a gate charge of 48 nC.

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The SiHP12N50C-E3, SiHF12N50C-E3, and SiHB12N50C-E3 500V, 12A n-channel power MOSFETs feature a 0.555? on-resistance at a 10V gate drive and a gate charge of 48 nC. The MOSFETs employ Planar Cell technology, which minimizes on-state resistance and withstands pulses in avalanche and commutation mode. The devices are compliant to RoHS 2002/95/EC and 100 % avalanche tested. Pricing starts at $0.65 each in volume. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.