Image

Low-Cost FET Enables K-Band Designs

Aug. 2, 2010
Outfitting designs in the K-Band at 20 GHz, the NE3517S03 GaAs FET features a low-cost Micro-X plastic package measuring 2.6 mm x 2.6 mm x 1.5 mm that does not reduce performance compared to a ceramic equivalent.

Outfitting designs in the K-Band at 20 GHz, the NE3517S03 GaAs FET features a low-cost Micro-X plastic package measuring 2.6 mm x 2.6 mm x 1.5 mm that does not reduce performance compared to a ceramic equivalent. Employed primarily as a low noise amplifier, it specifies a noise figure of 0.7 at a gain of 13.5 at 20 GHz. Pricing is $0.99 each/100,000. CALIFORNIA EASTERN LABORATORIES, Santa Clara, CA. (408) 988-3500.

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!