Outfitting designs in the K-Band at 20 GHz, the NE3517S03 GaAs FET features a low-cost Micro-X plastic package measuring 2.6 mm x 2.6 mm x 1.5 mm that does not reduce performance compared to a ceramic equivalent.
Outfitting designs in the K-Band at 20 GHz, the NE3517S03 GaAs FET features a low-cost Micro-X plastic package measuring 2.6 mm x 2.6 mm x 1.5 mm that does not reduce performance compared to a ceramic equivalent. Employed primarily as a low noise amplifier, it specifies a noise figure of 0.7 at a gain of 13.5 at 20 GHz. Pricing is $0.99 each/100,000. CALIFORNIA EASTERN LABORATORIES, Santa Clara, CA. (408) 988-3500.
