The NPT1010 GaN HEMT exhibits a thermal resistance of 1.4°C/W, supposedly the lowest thermal resistance of all GaN products at this power level on the market.
The second device built on the company’s power transistor platform technology, the NPT1010 GaN HEMT exhibits a thermal resistance of 1.4°C/W, supposedly the lowest thermal resistance of all GaN products at this power level on the market. The device achieves over 60W, more than 55% drain efficiency, and over 14-dB power gain in 500 MHz to 1 GHz applications with less than 80°C rise in junction temperature. The NPT1010 is available in a ceramic air cavity package in bolt-down and pill (solder) versions. NITRONEX CORP., Durham, NC. (919) 807-9100.
