Richardson RFPD is providing full design support capabilities for two new gallium nitride on silicon carbide (GaN on Sic) from TriQuint. The TGA2216-SM is a wideband cascode amplifier offering exceptional wideband performance and supporting 40 V operation. It operates from 0.1 to 3.0 GHz and provides greater than 10 W of saturated output power with greater than 13 dB of large signal gain and greater than 40% power-added efficiency. The TGA2237-SM is a wideband distributed amplifier that operates from 0.03 to 2.5 GHz and provides greater than 10 W of saturated output power with greater than 13 dB of large signal gain and greater than 50% power-added efficiency. Both new devices are characterized for linear and continuous wave operation for use in military and commercial communication applications, as well as jammer and other electronic warfare applications. They are available in SMT 32-lead, 5x5 mm AIN QFN packages and are fully-matched to 50 Ω at both RF ports. DC blocks are required on both RF ports, and the drain voltage must be injected through an off-chip bias-tee on the RF output port. The devices are also available in die form (TGA2216 / TGA2237) and evaluation boards are available upon request.
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