SiC Schottky Barrier Diodes Minimize Server Power-Supply Loss

The FMCA series of silicon-carbide (SiC) Schottky barrier diodes, offered by Allegro MicroSystems and manufactured/developed by Sanken Electric Co. in Japan, will target the industrial and computer markets with end applications to include servers and those requiring high-frequency rectification circuits. The diodes use next-generation power-semiconductor SiC and a 650-V breakdown voltage in a Schottky barrier configuration, suiting them for continuous current-mode power-factor-correction (PFC) circuits. Capable of reducing power loss resulting from the recovery circuit, the devices deliver high-speed switching capability and energy-saving functionality that can lead to downsizing of equipment. Beyond improved efficiency of the power supply thanks to a high-speed switching SiC-MOSFET, which delivers low resistance, the diodes eliminate the thermal runway, leading to increased current within high-temperature environments to maintain stable switching. The FMCA series comes in TO-220F packages.

ALLEGRO MICROSYSTEM LLC

SANKEN ELECTRIC CO. LTD.