MOSFETs Provide Low On-Resistance, Maximum Power

Offering what's claimed as the highest voltage, lowest on-resistance, and maximum power available in a TO-264 and T-MAX package, the firm has added to its POWER MOS V family of fast-switching MOSFETs. The metal on polysilicon gate MOSFET has internal chip gate resistances that are lower than comparable industry-standard polysilicon gate devices, allowing for fast switching and low switching losses. Features include: 100V to 1200V breakdown; 9 to 60 milliohms on-resistance; 20A to 100A drain current; 625W power dissipation; through-hole and clip-mounted packages; low internal gate resistance; and avalanche energy ratings. FREDFET versions are also available where a fast internal diode is required. Applications include dc/dc converters, PFC pre-regulators, switchmode power supplies, UPS, motor controls and inverters. Evaluation samples are available in 100-1200V devices with price ranging from $18.06 to $26.83 each/1000.