Opto Diode Corp. has introduced a wide temperature range infrared emitter designed for demanding military and industrial markets. The gallium aluminum arsenide (GaAlAs) OD-850WHT IR light-emitting diode features typical optical power output ranges from 24 to 28mW, a wide emission angle, and operates at extended temperature ranges from -65 to +150 °C. The emitter has peak emission of 850 nm and an optical half intensity beam angle of 80 degrees. With no internal coatings, the device can operate without heat sinking and without derating to 80 °C.
For military applications, the extended temperature range of the OD-850WHT allows simplified thermal design for night vision, aircraft, and vehicle light markers for covert operations. The device's thermal improvements are also ideal for high temperature industrial photoelectric controls used in petroleum refining, chemical processing, and power generation. Improvements in thermal design reduces overall cost for monitoring and inspection systems for heaters and furnaces so increased productivity, reduced fuel consumption and emissions, can be achieved.
The device is available in a hermetically-sealed, standard two-lead TO-46 package. All surfaces on Opto Diode's high-temperature infrared emitter are gold-plated for added durability.