Electronicdesign 6638 1121npdtvishay

P-Channel MOSFETs Reduce On-Resistance To New Lows

Nov. 22, 2013
Just-released TrenchFET p-channel Gen III power MOSFETs offer the lowest on-resistance for −12- and −20-V devices at −4.5- and −2.5-V gate drives in 3.0- by 1.9-mm PowerPAK ChipFET and 3.3- by 3.3-mm PowerPAK 1212-8S packages, says developer Vishay Intertechnology.

Just-released TrenchFET p-channel Gen III power MOSFETs offer the lowest on-resistance for −12- and −20-V devices at −4.5- and −2.5-V gate drives in 3.0- by 1.9-mm PowerPAK ChipFET and 3.3- by 3.3-mm PowerPAK 1212-8S packages, says developer Vishay Intertechnology. To save printed-circuit-board (PCB) space, the −12-V Si5411EDU MOSFET features an 8.2-mΩ (−4.5 V) and 11.7-mΩ (−2.5 V) RDS(on) in the PowerPAK ChipFET. To achieve a higher voltage rating, the −20-V Si5415AEDU maintains values of 9.6 mΩ (−4.5 V) and 13.2 mΩ (−2.5 V). Both devices provide 5000-V electrostatic-discharge protection. Applications requiring extremely low RDS(on) can opt for the SiSS23DN, which has values of 4.5 mΩ (−4.5 V) and 6.3 mΩ (−2.5 V) in the PowerPAK 1212-8S package with 0.75-mm profile. All are halogen-free according to JEDEC JS709A and RoHS-compliant. Applications include power management in smartphones, tablets, notebooks, industrial sensors, and point-of-load modules.

VISHAY INTERTECHNOLOGY INC.

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