Asymmetric Dual-TrenchFET MOSFET Lowers On-Resistance By 57%

Vishay Intertechnology says its 30-V asymmetric dual-TrenchFET power MOSFET, housed in the PowerPAIR 3- by 3-mm package, offers 57% lower on-resistance, up to 25% higher power density, and 5% higher efficiency than previous generations in this package size. The SiZ340DT leverages TrenchFET Gen IV technology to boost density while reducing R_DS(on) without significantly increasing gate charge. Thus, it minimizes conduction losses and cuts power loss for higher power output. On-resistance for the device’s low-side Channel 2 MOSFET measures 5.1 mΩ at a 10-V gate drive and 7.0 mΩ at 4.5 V, while the high-side Channel 1 MOSFET features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V. Gate charge is 10.1 nC and 5.6 nC, respectively. The overall lower on-resistance times gate charge reduces conduction and switching losses to improve total system efficiency, leading to cooler operation or increased power density. Applications include synchronous buck designs for cloud-computing infrastructures, servers, telecom equipment, and client-side electronic devices and mobile computing.

VISHAY INTERTECHNOLOGY INC.