Electronicdesign 5835 0321epc

Development Board Features Dedicated 100 V eGaN FETs

March 21, 2013
Development board facilitates rapid design of high frequency switching power conversion systems with a 100 V eGaN FET

The EPC9010 development board from EPC facilitates rapid design of high frequency switching power conversion systems with a 100 V eGaN FET in applications such as high-speed dc-dc power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits. The 100 V, 7 A board is 2” x 1.5” and contains two EPC2016 eGaN FETs in a half bridge configuration using the LM5113 gate driver from TI, as well as supply and bypass capacitors. Its purpose is to simplify the evaluation process of eGaN FETs by including all the critical components and layout for optimal switching performance on a single board that can be connected into any existing converter. The board also contains various probe points to facilitate simple waveform measurement and efficiency calculation. eGaN FETs are power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, PoE, solar micro inverters, energy efficient lighting and class-D audio amplifiers. EPC9010 development boards are priced at $99 and are available for immediate delivery from Digi-Key.

EFFICIENT POWER CONVERSION CORPORATION

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