512 Mb DRAM Delivers 3.2 GHz Transfers

March 4, 2004
Setting up shop as the market's fastest memory devices of any variety, the 512 Mb TC59YM916AMG32A, TC59YM916AMG32B, and TC59YM916AMG32C XDR DRAMs provide data-transfer rates up to 3.1 GHz. The devices are based on Rambus' XDR memory-interface

Setting up shop as the market's fastest memory devices of any variety, the 512 Mb TC59YM916AMG32A, TC59YM916AMG32B, and TC59YM916AMG32C XDR DRAMs provide data-transfer rates up to 3.1 GHz. The devices are based on Rambus' XDR memory-interface technology to provide an octal data rate, which transfers eight pieces of data per clock cycle. They provide cycle times of 40, 50, and 60 ns and latencies of 27, 35, and 35 ns, respectively. Operating from a 1.8V supply, the devices are configured as 4-Mb words x 8 banks x 16 bits. For more details, call TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., San Jose, CA. (408) 526-2400.

Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC.

Product URL: Click here for more information

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!