SRAMs Run With Little Current

July 1, 2003
The IS64LV6416AL and IS64LV1024AL asynchronous SRAMs are configured as 64Kx16 and 128Kx8 memories, respectively, and exhibit an access time of 20 ns while drawing 12 mA. Typical standby current is 4 µA. The 1-Mb devices operate on 2.5V and have a

The IS64LV6416AL and IS64LV1024AL asynchronous SRAMs are configured as 64Kx16 and 128Kx8 memories, respectively, and exhibit an access time of 20 ns while drawing 12 mA. Typical standby current is 4 µA. The 1-Mb devices operate on 2.5V and have a data retention voltage range of 1.2V to 3.6V. With an eye on the automotive market, they are available in three temperature ranges: A1 (-40°C to 85°C), A2 (-40°C to 105°C), and A3 (-40°C to 125°C). Similar to the company's 8-Mb asynchronous SRAMs, the 64LV6416AL is fabricated using 6T 0.15 µm CMOS technology. Applications include networking and broadband equipment, including WLAN, digital consumer, and mobile communications. The IS64LV6416AL is available in 48-ball mBGA and 44-pin TSOP (II) JEDEC packages, while the IS64LV1024AL comes in 36-ball mBGA and 32-pin TSOP (II) JEDEC packages. Price is $2 each/10,000. INTEGRATED SILICON SOLUTION INC., Santa Clara, CA. (408) 969-4675.

Company: INTEGRATED SILICON SOLUTION INC.

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