High-Density Flash Family Eyes Cell Phone Mart

Nov. 1, 2003
The seven products added to the second-generation 32 Series ComboMemory family (SST32HFxxx) offer a blend of up to 64 Mb of 0.18-micron super flash memory with up to 32 Mb of pseudo-static random-access memory (PSRAM). Similar to their predecessors,

The seven products added to the second-generation 32 Series ComboMemory family (SST32HFxxx) offer a blend of up to 64 Mb of 0.18-micron super flash memory with up to 32 Mb of pseudo-static random-access memory (PSRAM). Similar to their predecessors, the latest devices employ the SoftPartition flash memory architecture, allowing users to seamlessly partition data and program code into granular 2 Kword sectors. Other features include: single 2.7V to 3.6V read and write operations; an active current of 15 mA for flash or PSRAM read; standby current of 5 µA for flash and 50 µA for PSRAM; erase times of 18 ms per 2 Kword sector, 18 ms per 32 Kword block, and 40 ms per chip; read access times of 70 ns and 90 ns for both flash and PSRAM; and a data retention time of 100 years. Aimed at low- to mid-range cell phones, the devices are available in three packages: 63-ball TFBGA (8 x 10 x 1.2 mm); 62-ball LFBGA (8 x 10 x 1.4 mm); and 63-ball LFBGA (8 x 10 x 1.4 mm). Depending on package and density, prices range from $7 to $15.50 each/10,000. For more details, call Alan Gille at SILICON STORAGE TECHNOLOGY INC., Sunnyvale, CA. (408) 523-7712.

Company: SILICON STORAGE TECHNOLOGY INC.

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