SRAM Deliver Higher Density Than 6T Solutions

Toted as the industry's highest density SRAM devices, the 72 Mb no bus latency (NoBL) burst SRAM family employ a patented one-transistor enhanced SRAM technology to achieve the same speed, four times higher density, and four times lower power than traditional six-transistor (6T) SRAM. The devices are organized as 2 Mb x 36 and operate at up to 166 MHz. They promise 100% bus bandwidth during four-word read/write transactions. Operating voltages of 2.5V or 3.3V are available and package options are a 100-pin TQFP and a 119-pin PBGA. Production quantities will be available in the second quarter of 2002. RAMTRON INTERNATIONAL CORP., San Jose, CA. (719) 481-7004.