FeRAM Breaks Bandwidth And Density Records

Oct. 8, 2008
Resetting industry benchmarks for density and operating speed, the company’s non-volatile ferroelectric random access memory (FeRAM) prototype achieves a storage density of 128 Mb and read/write speeds of 1.6 GB/s. The device modifies the

Resetting industry benchmarks for density and operating speed, the company’s non-volatile ferroelectric random access memory (FeRAM) prototype achieves a storage density of 128 Mb and read/write speeds of 1.6 GB/s. The device modifies the company's original chain FeRAM architecture, which prevents cell signal degradation, a common tradeoff from chip scaling. The combination realizes an up-scaled FeRAM with a density of 128 Mb. Furthermore, a unique circuit that predicts and controls power-supply fluctuations allows the integration of a DDR2 interface to maximize data transfers at a high throughput at a lower power consumption. Specifications include a 130-nm CMOS process, cell size of 0.252 µm x 0.252 ?m, cycle time of 83 ns, access time of 43 ns, and a power supply of 1.8V. TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., San Jose, CA. (408) 526-2400.

Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC.

Product URL: Click here for more information

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!