Electronicdesign 7411 0530npbwsamsung

Mass Production Underway For 32-Layer 3D V-NAND Flash

May 30, 2014
Samsung Electronics has begun mass production for its second-generation, three-dimensional (3D) V-NAND flash memory, which uses 32 vertically stacked cell layers.

Samsung Electronics has begun mass production for its second-generation, three-dimensional (3D) V-NAND flash memory, which uses 32 vertically stacked cell layers. Coupled with this announcement is the launch of solid-state disks (SSDs), based on the second-generation V-NAND or “Vertical NAND,” with 128-, 256-, and 512-Gbyte, as well as 1-Tbyte, storage options.  They have approximately twice the endurance for writing data and consumer 20% less power when compared to planar (2D) MLC NAND-based drives, according to Samsung. The company introduced the SSDs to data centers last year, and will extend the family to high-end PC applications.

SAMSUNG ELECTRONICS CO. LTD.

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