Mass Production Underway For 32-Layer 3D V-NAND Flash

Samsung Electronics has begun mass production for its second-generation, three-dimensional (3D) V-NAND flash memory, which uses 32 vertically stacked cell layers.
May 30, 2014

Samsung Electronics has begun mass production for its second-generation, three-dimensional (3D) V-NAND flash memory, which uses 32 vertically stacked cell layers. Coupled with this announcement is the launch of solid-state disks (SSDs), based on the second-generation V-NAND or “Vertical NAND,” with 128-, 256-, and 512-Gbyte, as well as 1-Tbyte, storage options.  They have approximately twice the endurance for writing data and consumer 20% less power when compared to planar (2D) MLC NAND-based drives, according to Samsung. The company introduced the SSDs to data centers last year, and will extend the family to high-end PC applications.

SAMSUNG ELECTRONICS CO. LTD.

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sign up for Electronic Design Newsletters
Get the latest news and updates.

Voice Your Opinion!

To join the conversation, and become an exclusive member of Electronic Design, create an account today!