Power MOSFETs Aimed At Battery Protection Apps

March 1, 2003
Five new n-channel TrenchFET power MOSFETs have been designed for battery-protection applications in one- and two-cell lithium-ion and lithium-polymer battery packs and circuitry. The Micro Foot Si8900EDB features an on-resistance of 24 mW at a 4.5V

Five new n-channel TrenchFET power MOSFETs have been designed for battery-protection applications in one- and two-cell lithium-ion and lithium-polymer battery packs and circuitry. The Micro Foot Si8900EDB features an on-resistance of 24 mW at a 4.5V gate drive and an average footprint area of 8.07 mm2. For smaller designs, the Micro Foot Si8902EDB offers on-resistance of 45 mW at a 4.5V gate drive in an average footprint area of 3.68 mm2. These two bi-directional 20V devices feature a 0.62 mm profile that fits the slim PCBs required in handheld electronics. For applications such as wall adapters that require a 30V device, the bi-directional Si6876EDQ power MOSFET displays an on-resistance of 30 mW at a 4.5V gate drive, in a TSSOP-8 package. The 20V Si6880EDQ exhibits a lower on-resistance of 18 mW at a 4.5V gate drive, is specified for operation down to 1.8V, and is available in the TSSOP-8 package. All four of these devices have 4,000V ESD protection. For applications demanding enhanced thermal performance, the 30V Si7902EDN dual common-drain power MOSFET is available in a PowerPAK 1212-8 package with a profile of 1.07 mm and a footprint area of 10.56 mm2. For compact portable equipment such as cell phones, pagers and PDAs, the Si7902EDN has an on-resistance value of 28 mW at a 4.5V gate drive and 3,000V EDN protection. Pricing for the Si8900EDB, Si8902EDB, Si6876EDQ, Si6880EDQ, and Si7902EDN is from $0.60 to $1.15 each/100,000. VISHAY SILICONIX, Santa Clara, CA. (610) 644-1300 x016-02.

Company: VISHAY SILICONIX

Product URL: Click here for more information

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