2-W SiGe HBT Transistor Amplifier Targets Two-Way Radio, UHF ISM Band Applications

    March 5, 2007
    NEC is now offering a 2-W SiGe HBT transistor amplifier for two-way radio applications including FRS, GMRS, and SMR, as well as general UHF and ISM band applications.

    NEC is now offering a 2-W SiGe HBT transistor amplifier for two-way radio applications including FRS, GMRS, and SMR, as well as general UHF and ISM band applications.

    The NESG270034 delivers high gain with high collector efficiency, which helps to reduce DC power consumption in handheld and battery-powered products.

    Typical Performance Specifications (@ 6V):
    @ 460 MHz @ 900 MHz
    Output Power @ 20 dBm PIN: +33.5 dBm +31.5 dBm
    Gain: 19.5 dB 15 dB
    Collector Efficiency: 60% 50%

    The NESG270034 is fabricated using NEC’s UHS2-HV SiGe process. Housed in NEC’s RoHS-compliant, thermally efficient, three pin power minimold “34” package, it’s in stock and available now from CEL. For more information visit www.cel.com.

    Click here for the NEC NESG270034 Data Sheet

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