Vishay Intertechnology’s single-chip power MOSFET and Schottky diode device is said to improve operational efficiency by up to 6% in dc-to-dc conversion applications compared with circuits using previous monolithic devices.
According to the vendor, the Vishay Siliconix Si4642DY SkyFET device was tested against competing single-chip MOSFET/Schottky devices as well as industry-standard discrete MOSFET and Schottky diode combinations using the same controller IC and high-side MOSFET. The circuit using the SkyFET device performed with greater efficiency, whether in a light or heavy load condition.
For example, efficiency greater than 91 % was demonstrated at 300 kHz and 6 A. These benefits are the results of the low forward-voltage drop and reverse recovery charge of the Si4642DY’s integrated Schottky diode and the reduced PCB parasitic inductance enabled by the integration of both devices onto a single chip.
The Si4642DY will typically be used as the low-side power MOSFET in synchronous buck converters. The device combines a 30-V breakdown voltage with MOSFET on-resistance of 3.75 mΩ at a 10-V gate drive. Pricing for U.S. delivery is $0.57 in 100,000-piece quantities. For more information, see www.vishay.com.