International Rectifier introduced the AUIRS2016S for automotive gate drive applications including common injection rails, diesel and gasoline direct injection applications and solenoid drivers.
The AUIRS2016S is a high-voltage power MOSFET high-side driver featuring an internal Vs-to-GND recharge NMOS. The device's output driver features a 250mA high pulse current buffer stage. The channel can be used to drive an N-channel power MOSFET in the high-side configuration, operating up to 150V above ground. The AUIRS2016S also provides negative voltage spike immunity (-Vs) to protect against catastrophic events during high-current switching and short circuit conditions.
Qualified to AEC-Q100 standards, the AUIRS2016S also offers 5V compatible logic level inputs, one high-side output and internal low side Vs recharge, CMOS Schmitt trigger inverted input with pull up resistor and CMOS Schmitt trigger inverted reset with pull down resistor.
The new device utilizes IR's advanced high-voltage IC process which incorporates next-generation high-voltage level-shifting and termination technology to deliver superior electrical over-stress protection and higher field reliability.
Pricing for the AUIRS2016S begins at US $0.98 each in 100,000-unit quantities. Production orders are available immediately. The automotive-qualified device is lead-free and RoHS compliant.