Vishay debuts common-drain dual n-channel 60-V MOSFET

MALVERN, PA. Vishay Intertechnology Inc. has introduced a new common-drain dual n-channel 60-V MOSFET in the compact, thermally enhanced PowerPAK 1212-8SCD package. Designed to increase power density and efficiency in battery-management systems, plug-in and wireless chargers, DC/DC converters, and power supplies, the Vishay Siliconix SiSF20DN

offers R_S-S(ON) down to 10 mΩ typical at 10 V in a 3-mm by 3-mm footprint. This value is 89% lower than Vishay's previous-generation devices. The result is reduced voltage drops across the power path and minimized power losses for increased efficiency.

To save PCB space, reduce component counts, and simplify designs, the device uses an optimized package construction with two monolithically integrated TrenchFET Gen IV n-channel MOSFETs in a common-drain configuration. The SiSF20DN's source contacts are placed side by side, with enlarged connections increasing the contact area with the PCB and reducing resistivity further compared to conventional dual-package types. This design makes the MOSFET suitable for bidirectional switching in 24-V systems and industrial applications, including factory automation, power tools, drones, motor drives, white goods, robotics, security/surveillance, and smoke alarms.

Samples and production quantities of the new MOSFET are available now, with lead times of 30 weeks for larger orders. Pricing for U.S. delivery starts at $0.86 per piece in 10,000-piece quantities.

Vishay Intertechnology Inc.