MOSFETs Tooled For RF Switching Assignments

Jan. 1, 2002
Targeting RF and MHz switching application, the 500V IXFN55N50F, IXFK55N50F, and IXFX55N50F MOSFETs handle up to 55A in SOT227, hole-less TO-247, and TO-264 packages, respectively. These devices have a power rating up to 600W. Rated for 1,000V and

Targeting RF and MHz switching application, the 500V IXFN55N50F, IXFK55N50F, and IXFX55N50F MOSFETs handle up to 55A in SOT227, hole-less TO-247, and TO-264 packages, respectively. These devices have a power rating up to 600W. Rated for 1,000V and 12A, the IXFH12N100F and IXFT12N100F in SMT To-247 and TO-268 packages, respectively, are rated up to 300W. The five devices employ a patented, dual-metal MOSFET structure, said to be responsible for their ability to handle the higher power levels. For further information and prices, contact IXYS CORP., Santa Clara, CA. (408) 982-0700.

Company: IXYS CORP.

Product URL: Click here for more information

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!