GaAs Schottkys Tout Low Losses In Switching Power Circuits

For power conversion and motion control applications, these gallium arsenide (GaAs) power Schottky rectifiers are said to be more attractive than silicon for high-frequency applications due to the GaAs crystal's higher breakdown voltage, higher electron mobility, and higher operating temperature. The Schottkys are capable of switching speeds up to 2 MHz and are practically temperature independent. These attributes reportedly dramatically reduce switching losses found with silicon devices in high-frequency applications.