FETs Provide Low Switching And Conduction Losses

Nov. 1, 2000
The POWER MOS 7 series 500V MOSFETs is said to have a 10% lower total gate charge and up to a 30% reduction in on-resistance compared to the company's POWER MOS VI generation of MOSFET devices. Incorporating the company's patented metal on polysilicon

The POWER MOS 7 series 500V MOSFETs is said to have a 10% lower total gate charge and up to a 30% reduction in on-resistance compared to the company's POWER MOS VI generation of MOSFET devices. Incorporating the company's patented metal on polysilicon gate structure, the internal chip gate resistance is claimed to be one to two orders of magnitude lower than comparable industry standard devices. This combined with lower capacitances, total gate charge, and on-resistance make the devices fast switching as well as having lower conduction losses. Features include a 500-V breakdown, on-resistances ranging from 38 to 149 milliohms, and current ratings from 32 to 91A. Prices range from $10.45 to $62.00.

Company: ADVANCED POWER TECHNOLOGY

Product URL: Click here for more information

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