A pair of medium-power GaAs devices is available in low-cost plastic packages for use in L- and S-Band transmitters, base stations and mobile communications handsets. The 3W NE6500379A GaAs MESFET and the 1W NE6510179A GaAs heterojunction FET deliver high output power, high gain, high power-added efficiency and excellent linearity, it's claimed. The devices are intended for Class AB operation and offer linear gain of 10 dB for the MESFET and 14 dB for the FET, respectively, at 1.9 GHz. Both come in SMT packaging.
Company: CALIFORNIA EASTERN LABORATORIES
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