HEXFETs Maximize Battery Life

July 1, 2000
The IRF7701, 7702, 7750 and 7700 12V and 20V, P-channel HEXFET power MOSFETs are claimed to set new battery mangement and power conversion efficiency standards in a TSSOP-8 package. Said to be 21% better than competing devices, the 12V IRF7701 and

The IRF7701, 7702, 7750 and 7700 12V and 20V, P-channel HEXFET power MOSFETs are claimed to set new battery mangement and power conversion efficiency standards in a TSSOP-8 package. Said to be 21% better than competing devices, the 12V IRF7701 and IRF7702 have on-resistances of 11 milliohms and 14 milliohms at 4.5V, respectively. These 12V devices guarantee on-resistance performance with a gate voltage of 1.8V.
The 20V IRF7750 and IRF7700 devices feature an on-resistance of 30 milliohms and 15 milliohms at 4.5V, respectively. Samples and production quantities are available immediately and pricing is $0.95 for the IRF7702 and $1.08 for the IRF7700, 7701 and 7750 each/10K.

Company: INTERNATIONAL RECTIFIER CORP. (IR)

Product URL: Click here for more information

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!