HDMOS FETs Are Efficient Switchers In Low Voltage Apps

By achieving low on-resistance and low gate charge, a new family of N-channel HDMOS (high-density metal oxide semiconductor) MOSFETs is said to offer improved performance and efficiency in switching applications such as in dc-to-dc converters. With drain source voltages of up to 30V, the FETs are said to be ideally suited for low-voltage switching applications. Ranging from 40 to 180 milliohms maximum, on-resistance is low across the entire family, thereby minimizing on-state losses and improving efficiency in low frequency drive applications. And with threshold voltages of 0.7V and 1V minimum, the FETs can be driven from low voltage sources. The devices come in SOT23, SOT23-6 and MSOP8 packages, with single and dual FETs in MSOP8s, as well as N/P duals also available.