PCIM 2012 Nuremberg: Richardson RFPD unveiled eight devices representing the new gallium-nitride (GaN) on silicon-carbide (SiC) family of power transistors from M/A-COM Technology Solutions. Targeted applications include the L- and S-Band from 960MHz to 3500MHz.
The GaN-on-SiC transistors provide rugged 50V operation with greater than 175W breakdown voltage, translating into reliable and stable operation in extreme mismatched load conditions. The devices come in thermally enhanced Cu/Mo/Cu flanged ceramic packages, and are EAR99-compliant.
Features vary for the specific models:
MAGX-000912-125L00 and MAGX-000912-250L00
969MHz to 1215MHz frequency range
GaN-on-SiC HEMT 125W and 250W pulsed power transistors
Internally matched
Common source configuration
Power-added efficiency of 60%
Developed for avionics applications, such as Mode-S, TCAS, JTIDS, DME and TACAN
MAGX-001214-125L00 and MAGX-001214-250L00:
1200MHz to 1400MHz Frequency Range
GaN-on-SiC HEMT 125W and 250W pulsed power transistors
Operates effectively even in extreme mismatch load conditions
Developed for L-Band radar applications
MAGX-001220-100L00:
1200MHz to 2000MHz frequency range
GaN-on-SiC HEMT 100W power transistor
High gain, efficiency, and superior ruggedness over a wide bandwidth
Drain efficiency of 55%
Withstands 10:1 load mismatches
MAGX-002731-030L00 and MAGX-002731-100L00:
2700MHz to 3100MHz frequency range
GaN on SiC HEMT 30W and 100W pulsed power transistors
High performance with extreme ruggedness
Breakdown performance excels up to 175V
Developed for civilian and military pulsed radar applications